请问FRAM辐射测试数据可用于辐射和SEU/SELN框架吗？

嗨，我附上了一份文件，它显示了FRAM（一般来说）对外部电磁场和辐射敏感性的测试结果。然而，这并没有给出关于SER的信息。我希望这份文件对你有用。问候，Asha
辐射。
474.4 K



     以下为原文
          Hi, I have attached a document which shows the test results of FRAM (in general) for susceptibility to external electromagnetic field and radiation. However, this doesn't give information about SER. I hope this document is useful to you. Regards, Asha   

•   Radiation.pdf 474.4 K  
  
  

易失性存储器，DRAM和SRAM，使用电容器来存储电荷或简单的锁存器来存储状态。这些细胞可以被α粒子、宇宙射线、重离子、伽马射线、X射线等扰乱，这会导致位翻转到相反的状态，从而导致软错误。由于F- RAM电池存储状态为PZT膜（锆钛酸铅）偏振，粒子击中是不太可能引起偏振改变给定的电池状态。



     以下为原文
          Volatile memories, DRAM and SRAM, use a capacitor to store charge or a simple latch to store state. These cells can be upset by alpha particles, cosmic rays, heavy ions, gamma, x-rays, etc. which cause bits to flip to an opposite state to cause a soft error. Since the F-RAM cell stores the state as a PZT film(lead zirconate titanate ) polarization, a particle hit is very unlikely to cause the polarization to change a given cell’s state.